2SA-230J Type Semiconductor Discharge Tube

◆ USE： 　　SA－230J type semiconductor discharge tube is used for distributing frame of communication apparatus,stored program controlled switching system and the firse overcurrent protection at user terminal,mainly for protective element. ◆ MAIN TECHNICAL INDEX： 　　1、SA－230J type semiconductor discharge tube can be changed into low-impedance(conduction) state rapidly when the electric voltage between two electrodes is over rated value and it can return to high resistance state after the voltage is dispelled,with indentical positive and negative characteristics. 　　2、Failure Mode：Short-circuit or low-impedance state. 　　3、Environment Condition ： 　　　　　temperature range ：（-40～+65）℃ 　　　　　humidity range：0～95%RH 　　　　　atmospheric pressure：86～106KPa　 　　4、Contour Dimension： ①Φ4×2mm　　　 ⑤Φ7×4mm 　　　　　　　　　　　　　　②Φ5.5×6mm 　　⑥Φ8×4mm 　　　　　　　　　　　　　　③Φ5.5×4mm 　　⑦Φ8×6mm 　　　　　　　　　　　　　　④Φ5×6mm 　　　Note：Packaging mode and dimension can be changed bye the demands of users. 　　5、Electrical Parameter： Name Standard Parameter Maximum limiting voltage（Vbo）max 260V(100KV/S),400V(1KV/μs) No actuating voltage 190V(1KΩ,1mA) Breakdown voltage（Vbr） 190V～260V Insulation voltage (R)min 1×109Ω(100V),1×108Ω(100V复测) Interelectrode capacity (C)max 200PF Impulsive reset time max 30ms Current changing rate (di/dt) 25～30A/μs Impulsive current IPP 100A(10/1000μs,300次) Power current 10A(50Hz,1s,5次) Power current 0.5A(50Hz,30s,1次)

TPA Type Semiconductor Discharge Tube

◆ USE： 　　TPA type semiconductor discharge tube is mainly used for overvoltage protection of telephone and other electric cricuits. ◆ DATA： 　　STPA180，STPA200，STPA220，DP0080EA，DP0080EB，DP0080EC，DP0300EA，DP0300EB，DP0300EC，DP0640EA，DP0640EB，DP0640EC，DP0720EA，DP0720EB，DP0720EC，DP0900EA，DP0900EB，DP0900EC，DP1100EA，DP1100EB，DP1100EC，DP1300EA，DP1300EB，DP1300EC，DP1500EA，DP1500EB，DP1500EC，DP1800EA，DP1800EB，DP1800EC，DP2300EA，DP2300EB，DP2300EC，DP2600EA，DP2600EB，DP2600EC，DP3100EA，DP3100EB，DP3100EC，DP3500EA，DP3500EB，DP3500EC，KET201，KET220（Contour：DO15，SMB，TO-92）。 ◆ MAIN TECHNICAL INDEX： 　　1、TPA type semiconductor discharge tube can be changed into low-impedance(conduction) state rapidly when the electric voltage between two electrodes is over rated value and it can return to high resistance state after the voltage is dispelled,with indentical positive and negative characteristics. 　　2、Electrical Parameter: Limit Value Symbol Item Test Condition Value Unit IPP Impulse current 10/1000μs 50 A 8/20μs 100 A ITSM surge current half-period wave pertime 50Hz 25 A Tstg Storage temperature   -40～150 ℃ Tj junction temperature   150 ℃ TI maximum lead bonding temperature 10s 230 ℃ dv/dt condution state voltage critical rising rate 67%VBR 5 KV/μs Electrical Parameter 25℃ Type IRM(μA) VRM(V) VBR(V) IBR(mA) VBO(V) IH(mA) VT(V) CPF max   min max max min max max TPA62 2 56 62 1 ≤300 ≥60 2 150 TPA150 2 135 150 1 ≤300 ≥60 4 100 TPA200 2 180 200 1 ≤300 ≥60 4 100 TPA220 2 198 220 1 ≤300 ≥60 4 100 TPA240 2 220 240 1 ≤300 ≥60 4 100 TPA270 2 243 270 1 ≤300 ≥60 4 100 Note：The surge of TPA type semiconductor discharge tube conforms to following standard: CCITTK17-K20 10/700μs 1.5KV 5/310μs 38A VDE0433 10/700μs 2KV 5/200μs 50A CNET 0.5/700μs 1.5KV 0.2/310μs 38A 　　3、Packaging Mode:lead pin plastic capsulation 　　4、Contour Dimension：(Unit：mm) Type Lmin h Φ1 Φ2 Contour Ⅰ 25.4 7.6 3.6 0.86 Contour Ⅱ 25.4 5.8 2.6 0.71